Invention Grant
- Patent Title: Thin film transistor, method of manufacturing the thin film transistor, and display apparatus including the thin film transistor
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Application No.: US17029889Application Date: 2020-09-23
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Publication No.: US12034082B2Publication Date: 2024-07-09
- Inventor: JeongSuk Yang , KwangMin Jo , Sohyung Lee
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG DISPLAY CO., LTD.
- Current Assignee: LG DISPLAY CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR 20190117409 2019.09.24 KR 20190179566 2019.12.31
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L27/32 ; H01L29/66 ; H10K59/121 ; H10K59/124

Abstract:
An embodiment of the present disclosure provides a thin film transistor, a method of manufacturing the thin film transistor and a display apparatus including the thin film transistor. The thin film transistor includes an active layer on a substrate, a gate electrode disposed apart from the active layer to at least partially overlap the active layer, and a gate insulation layer between the active layer and the gate electrode. The gate insulation layer can cover an entire top surface of the active layer facing the gate electrode. The active layer can include a channel part overlapping the gate electrode, a conductivity-providing part which does not overlap the gate electrode, and an offset part between the channel part and the conductivity-providing part. The offset part may not overlap the gate electrode, and the conductivity-providing part can be doped with a dopant.
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Information query
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