Invention Grant
- Patent Title: Optoelectronic component having a dielectric reflective layer and production method for same
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Application No.: US17279632Application Date: 2019-09-26
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Publication No.: US12034098B2Publication Date: 2024-07-09
- Inventor: Andreas Leber , Siegfried Herrmann , Christine Rafael
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: VIERING, JENTSCHURA & PARTNER mbB
- Priority: DE 2018123932.7 2018.09.27
- International Application: PCT/EP2019/076077 2019.09.26
- International Announcement: WO2020/064947A 2020.04.02
- Date entered country: 2021-03-25
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L33/38 ; H01L33/46 ; H01L33/60 ; H01L33/62

Abstract:
An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.
Public/Granted literature
- US20210391506A1 OPTOELECTRONIC COMPONENT HAVING A DIELECTRIC REFLECTIVE LAYER AND PRODUCTION METHOD FOR SAME Public/Granted day:2021-12-16
Information query
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