- Patent Title: Vertical-cavity surface-emitting laser with dense epi-side contacts
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Application No.: US18166089Application Date: 2023-02-08
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Publication No.: US12034273B2Publication Date: 2024-07-09
- Inventor: Eric R. Hegblom , Albert Yuen
- Applicant: Lumentum Operations LLC
- Applicant Address: US CA San Jose
- Assignee: Lumentum Operations LLC
- Current Assignee: Lumentum Operations LLC
- Current Assignee Address: US CA San Jose
- Agency: Harrity & Harrity, LLP
- Main IPC: H01S5/042
- IPC: H01S5/042 ; H01S5/02 ; H01S5/183 ; H01S5/40 ; H01S5/42

Abstract:
An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.
Public/Granted literature
- US20230187905A1 VERTICAL-CAVITY SURFACE-EMITTING LASER WITH DENSE EPI-SIDE CONTACTS Public/Granted day:2023-06-15
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