Invention Grant
- Patent Title: Selector device and semiconductor storage device
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Application No.: US17462600Application Date: 2021-08-31
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Publication No.: US12035541B2Publication Date: 2024-07-09
- Inventor: Gu Tianyi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 21044885 2021.03.18
- Main IPC: H10B63/00
- IPC: H10B63/00 ; H10B61/00 ; H10N70/00 ; H10N70/20

Abstract:
A selector device includes: a first electrode; a second electrode; a selector layer that is disposed between the first electrode and the second electrode; and a stacked film that is disposed in at least one of a portion between the first electrode and the selector layer and a portion between the second electrode and the selector layer, and includes a first layer including at least one first element selected from the group consisting of carbon and metal and not including nitrogen and a second layer including nitride of the first element. The first layer is in contact with the selector layer.
Public/Granted literature
- US20220302213A1 SELECTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2022-09-22
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