Invention Grant
- Patent Title: Josephson junction device fabricated by direct write ion implantation
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Application No.: US17564133Application Date: 2021-12-28
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Publication No.: US12035641B2Publication Date: 2024-07-09
- Inventor: Steven J. Holmes , Devendra K. Sadana , Oleg Gluschenkov , Martin O. Sandberg , Marinus Johannes Petrus Hopstaken , Yasir Sulehria
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Intelletek Law Group, PLLC
- Agent Gabriel Daniel, Esq.
- Main IPC: H10N60/12
- IPC: H10N60/12 ; H10N60/01 ; H10N60/80 ; H10N60/85

Abstract:
A Josephson Junction qubit device is provided. The device includes a substrate of silicon material. The device includes first and second electrodes of superconducting metal. The device may include a nanowire created by direct ion implantation on to the silicon material to connect the first and second electrodes. The device may include first and second superconducting regions created by direct ion implantation on to the silicon material, the first superconducting region connecting the first electrode and the second superconducting region connecting the second electrode, with a silicon channel formed by a gap between the first and second superconducting regions.
Public/Granted literature
- US20230210019A1 JOSEPHSON JUNCTION DEVICE FABRICATED BY DIRECT WRITE ION IMPLANTATION Public/Granted day:2023-06-29
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