- Patent Title: 3D devices with 3D diffusion breaks and method of forming the same
-
Application No.: US17480336Application Date: 2021-09-21
-
Publication No.: US12040236B2Publication Date: 2024-07-16
- Inventor: H. Jim Fulford , Mark I. Gardner
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/8238 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
A method of microfabrication is provided. The method includes forming shell structures above a first layer including a first semiconductor material. The shell structures are electrically isolated from each other and electrically isolated from the first layer. The shell structures include at least one type of semiconductor material and each include a dielectric core structure. Each shell structure is configured to include a top source/drain (S/D) region, a channel region and a bottom S/D region serially connected in a vertical direction perpendicular to the first layer and have a current flow path in the vertical direction. A bottom contact structure connected to a respective bottom S/D region of each shell structure is formed. A gate structure is formed on a sidewall of a respective channel region of each shell structure.
Public/Granted literature
- US20220254690A1 3D DEVICES WITH 3D DIFFUSION BREAKS AND METHOD OF FORMING THE SAME Public/Granted day:2022-08-11
Information query
IPC分类:
