Invention Grant
- Patent Title: Package structure for semiconductor device and preparation method thereof
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Application No.: US17423150Application Date: 2019-12-13
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Publication No.: US12040241B2Publication Date: 2024-07-16
- Inventor: Chen Liu , Yuming Zhang , Hongliang Lv
- Applicant: XIDIAN UNIVERSITY
- Applicant Address: CN Xi'an
- Assignee: XIDIAN UNIVERSITY
- Current Assignee: XIDIAN UNIVERSITY
- Current Assignee Address: CN Xi'an
- Agency: Workman Nydegger
- International Application: PCT/CN2019/125014 2019.12.13
- International Announcement: WO2021/114202A 2021.06.17
- Date entered country: 2021-07-15
- Main IPC: H01L23/06
- IPC: H01L23/06 ; C23C8/10 ; C23C8/80 ; C23C16/34 ; C23C16/40 ; C23C16/455 ; H01L21/02 ; H01L21/48 ; H01L21/52
Abstract:
This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO2 film, a Si3N4 film and a second SiO2 film stacked in this order, wherein the first SiO2 film is formed by a thermal oxidation process, the Si3N4 film is formed by a low pressure chemical vapor deposition process, and the second SiO2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.
Public/Granted literature
- US20220319940A1 Package Structure for Semiconductor Device and Preparation Method Thereof Public/Granted day:2022-10-06
Information query
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