Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing semiconductor structure
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Application No.: US17826222Application Date: 2022-05-27
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Publication No.: US12040296B2Publication Date: 2024-07-16
- Inventor: Luguang Wang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2210033870.3 2022.01.12
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor structure and a method for same are provided. The semiconductor structure includes: a first base having a first face, a second base having a second face, and a welding structure. The first base has an electrical connection column protruding from the first face. A first groove is provided at top of the electrical connection column. A conductive column is provided in the second base, and the second base also has a second groove. A top face and at least portion of a side face of the conductive column are exposed by the second groove. The electrical connection column is partially located in the second groove, and the conductive column is partially located in the first groove. At least portion of the welding structure is filled in the second groove, and at least further portion of the welding structure is filled between the conductive column and first groove.
Public/Granted literature
- US20230223367A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2023-07-13
Information query
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