Invention Grant
- Patent Title: Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device
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Application No.: US18191829Application Date: 2023-03-28
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Publication No.: US12040433B2Publication Date: 2024-07-16
- Inventor: Tsukasa Torimoto , Tatsuya Kameyama , Marino Kishi , Chie Miyamae , Susumu Kuwabata , Taro Uematsu , Daisuke Oyamatsu , Kenta Niki
- Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
- Applicant Address: JP Nagoya
- Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM,OSAKA UNIVERSITY,NICHIA CORPORATION
- Current Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM,OSAKA UNIVERSITY,NICHIA CORPORATION
- Current Assignee Address: JP Nagoya; JP Osaka; JP Anan
- Agency: Hunton Andrews Kurth LLP
- Priority: JP 17037477 2017.02.28 JP 18025251 2018.02.15
- Main IPC: H01L33/50
- IPC: H01L33/50 ; C09K11/62 ; H01L33/00 ; H01L33/06

Abstract:
Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
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