Invention Grant
- Patent Title: Voltage generator and semiconductor device including the same
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Application No.: US18063777Application Date: 2022-12-09
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Publication No.: US12040704B2Publication Date: 2024-07-16
- Inventor: Sungju Lee , Kyungsoo Ha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20220000192 2022.01.03 KR 20220032140 2022.03.15
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H02M1/00 ; G11C5/14

Abstract:
A voltage generator includes a charge pump circuit including a first charge pump having a plurality of first pumping capacitors, and a second charge pump having a plurality of second pumping capacitors having a capacitance different from a capacitance of each of the plurality of first pumping capacitors. The charge pump circuit is configured to supply a power supply voltage to a power mesh. The voltage generator further includes a controller configured to output a control signal based on a target level of the power supply voltage, and an oscillator configured to output a clock signal to the charge pump circuit. The oscillator outputs the clock signal to one of the first charge pump and the second charge pump based on the control signal.
Public/Granted literature
- US20230216397A1 VOLTAGE GENERATOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2023-07-06
Information query
IPC分类: