Invention Grant
- Patent Title: Self clocked low power doubling charge pump
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Application No.: US17817116Application Date: 2022-08-03
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Publication No.: US12040705B2Publication Date: 2024-07-16
- Inventor: Alexander Heubi
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Polansky & Associates, P.L.L.C.
- Agent Paul J. Polansky; Nathan H. Calvert
- Main IPC: H02M3/07
- IPC: H02M3/07

Abstract:
A high voltage is generated from a low supply voltage by a charge pump driven with a pulse generator. A comparator compares the low supply voltage to a predetermined proportion of the high voltage. A low power voltage divider creates the predetermined portion of the high voltage. The comparator output drives the pulse generator, and the pulse generator output resets the comparator. A high voltage to low voltage mode may also be employed using the same arrangement.
Public/Granted literature
- US20230057051A1 SELF CLOCKED LOW POWER DOUBLING CHARGE PUMP Public/Granted day:2023-02-23
Information query
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