Invention Grant
- Patent Title: Memory system
-
Application No.: US17862815Application Date: 2022-07-12
-
Publication No.: US12040793B2Publication Date: 2024-07-16
- Inventor: Seung Ho Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP&T GROUP LLP
- Priority: KR 20170063919 2017.05.24
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H03K19/00 ; H03K19/003 ; H03K19/017 ; H03K19/17788

Abstract:
An input/output driving circuit may include a pad, an open-drain driving circuit, a high-voltage protection unit and a control unit. The pad is for transmitting and receiving signals. The open-drain driving circuit may output a transmission signal to the pad. The high-voltage protection unit may input a received signal from the pad. The control unit may control the open-drain driving circuit and the high-voltage protection unit. The control unit may include a gate control logic, a transmission control logic and an inverter. The gate control logic may receive a voltage of the pad and output a feedback voltage to the open-drain driving circuit. The transmission control logic may receive a clock signal and an enable signal, and transfer a first control signal to the open-drain driving circuit. The inverter may invert the enable signal and transfer an inverted enable signal to the gate control logic.
Public/Granted literature
- US20220345132A1 MEMORY SYSTEM Public/Granted day:2022-10-27
Information query
IPC分类: