Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the semiconductor device
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Application No.: US17327209Application Date: 2021-05-21
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Publication No.: US12041768B2Publication Date: 2024-07-16
- Inventor: Jae Taek Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: WILLIAM PARK & ASSOCIATES LTD.
- Priority: KR 20200158815 2020.11.24
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H10B41/10 ; H10B41/27 ; H10B43/10

Abstract:
A semiconductor device includes: a cell stack structure including first cell stack layers and stack conductive layers, which are alternately stacked; a cell plug penetrating the cell stack structure; and a cell chip guard surrounding the cell stack structure and the cell plug. The cell chip guard includes a guard semiconductor layer and a guard insulating layer covering a sidewall of the guard semiconductor layer.
Public/Granted literature
- US20220165740A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE Public/Granted day:2022-05-26
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