Invention Grant
- Patent Title: Magnetic device and magnetic random access memory
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Application No.: US18227867Application Date: 2023-07-28
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Publication No.: US12041855B2Publication Date: 2024-07-16
- Inventor: MingYuan Song , Shy-Jay Lin , William J. Gallagher , Hiroki Noguchi
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: H10N50/80
- IPC: H10N50/80 ; G11C11/16 ; H10N50/01 ; H10N50/85
Abstract:
A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.
Public/Granted literature
- US20230380294A1 MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2023-11-23
Information query
