Invention Grant
- Patent Title: Single crystal ingot growth control device
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Application No.: US17424098Application Date: 2020-01-20
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Publication No.: US12043917B2Publication Date: 2024-07-23
- Inventor: Hyun Woo Park
- Applicant: SK SILTRON CO., LTD.
- Applicant Address: KR Gumi-si
- Assignee: SK SILTRON CO., LTD.
- Current Assignee: SK SILTRON CO., LTD.
- Current Assignee Address: KR Gumi-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Priority: KR 20190009929 2019.01.25
- International Application: PCT/KR2020/000962 2020.01.20
- International Announcement: WO2020/153689A 2020.07.30
- Date entered country: 2021-07-19
- Main IPC: C30B15/00
- IPC: C30B15/00 ; C30B15/22 ; C30B29/06 ; G05B6/02

Abstract:
A single crystal ingot growth control device includes: an input unit that receives a diameter error that is a difference value between a measured diameter of the ingot and a target diameter; a calculation unit that performs integral calculation on the diameter error received by the input unit in real time and calculates a final pulling speed for each set time that is increased stepwise by reflecting the diameter error integral value, and an output unit that outputs the final pulling speed calculated by the calculation unit to a pulling controller during the set time.
Public/Granted literature
- US20220127749A1 SINGLE CRYSTAL INGOT GROWTH CONTROL DEVICE Public/Granted day:2022-04-28
Information query
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