The invention is notably directed to a device comprising a plurality of resistive memory elements. The plurality of resistive memory elements comprises a resistive material. The device is configured to apply programming pulses to a subset of the plurality of resistive memory elements to perform a temporary resistance change of the resistive material of the subset for a predefined retention period, thereby programming the subset of the plurality of resistive elements from a first resistance state corresponding to a first binary state to a second resistance state corresponding to a second binary state. The device is configured such that a resistance of the subset of the plurality of resistive elements reverts automatically during the predefined retention period from the second resistance state to the first resistance state by an inherent material property of the resistive material, thereby automatically deleting the second binary state.