Invention Grant
- Patent Title: eFUSE one-time programmable memory with inter integrated circuit (I2C) communication and operation method thereof
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Application No.: US17584586Application Date: 2022-01-26
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Publication No.: US12046312B2Publication Date: 2024-07-23
- Inventor: Wan-Chul Kong , Woojin Han , Changbum Im , Keesik Ahn , Sungbum Park , Ilwoo Lee
- Applicant: SK keyfoundry Inc.
- Applicant Address: KR Cheongju-si
- Assignee: SK keyfoundry Inc.
- Current Assignee: SK keyfoundry Inc.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR 20210109236 2021.08.19
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G06F13/42 ; G11C7/10 ; G11C17/16

Abstract:
An eFuse one-time programmable (OTP) memory is provided. The eFuse OTP memory supports inter integrated circuit (I2C) communication, and an operation method thereof. The eFuse OTP memory includes: an eFuse intellectual property (IP) which data writes once and data reads multiple times for a plurality of addresses; and an I2C slave which communicates with an I2C master based on a serial clock line and a serial data line, and performs the data write and the data read to and from the eFuse IP.
Public/Granted literature
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