Invention Grant
- Patent Title: Interconnect structure and method of forming same
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Application No.: US17818414Application Date: 2022-08-09
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Publication No.: US12046557B2Publication Date: 2024-07-23
- Inventor: Su-Jen Sung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16707450 2019.12.09
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L29/417 ; H01L29/423
Abstract:
An apparatus comprises a first metal feature in a first dielectric layer over a substrate, wherein a sidewall portion of the first dielectric layer is over a top surface of the first metal feature, a second dielectric layer over the first dielectric layer and a second metal feature extending through the second dielectric layer, wherein a bottom of a first portion of the second metal feature is in contact with the top surface of the first metal feature and a bottom of a second portion of the second metal feature is in contact with the sidewall portion of the first dielectric layer.
Public/Granted literature
- US20220384346A1 Interconnect Structure and Method of Forming Same Public/Granted day:2022-12-01
Information query
IPC分类:
