Invention Grant
- Patent Title: Electrostatic discharge circuit and method of forming the same
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Application No.: US17213630Application Date: 2021-03-26
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Publication No.: US12046567B2Publication Date: 2024-07-23
- Inventor: Tao-Yi Hung , Jam-Wem Lee , Kuo-Ji Chen , Wun-Jie Lin
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L23/60 ; H01L27/02 ; H02H9/04

Abstract:
A semiconductor device includes a device wafer having a first side and a second side. The first and second sides are opposite to each other. The semiconductor device includes a plurality of first interconnect structures disposed on the first side of the device wafer. The semiconductor device includes a plurality of second interconnect structures disposed on the second side of the device wafer. The plurality of second interconnect structures comprise a first power rail and a second power rail. The semiconductor device includes a carrier wafer disposed over the plurality of first interconnect structures. The semiconductor device includes an electrostatic discharge (ESD) protection circuit formed over a side of the carrier wafer. The ESD protection circuit is operatively coupled to the first and second power rails.
Public/Granted literature
- US20210366846A1 ELECTROSTATIC DISCHARGE CIRCUIT AND METHOD OF FORMING THE SAME Public/Granted day:2021-11-25
Information query
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