Invention Grant
- Patent Title: Semiconductor device including deep trench isolation structure comprising dielectric structure and copper structure and method of making the same
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Application No.: US17192068Application Date: 2021-03-04
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Publication No.: US12046615B2Publication Date: 2024-07-23
- Inventor: Yung-Hsiang Chen , Yu-Lung Yeh , Yen-Hsiu Chen , Bo-Chang Su , Cheng-Hsien Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/762
Abstract:
A semiconductor device is provided. The semiconductor device includes a first deep trench isolation (DTI) structure within a substrate. The first DTI structure includes a barrier structure, a dielectric structure, and a copper structure. The dielectric structure is between the barrier structure and the copper structure. The barrier structure is between the substrate and the dielectric structure.
Public/Granted literature
- US20210366954A1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING Public/Granted day:2021-11-25
Information query
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