Invention Grant
- Patent Title: Non-conformal capping layer and method forming same
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Application No.: US17813793Application Date: 2022-07-20
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Publication No.: US12046660B2Publication Date: 2024-07-23
- Inventor: Ming-Ho Lin , Cheng-I Lin , Chun-Heng Chen , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/06 ; H01L29/78 ; H01L21/3213
Abstract:
A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.
Public/Granted literature
- US20220359720A1 Non-Conformal Capping Layer and Method Forming Same Public/Granted day:2022-11-10
Information query
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