Invention Grant
- Patent Title: Solid-state imaging element
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Application No.: US17995745Application Date: 2021-02-24
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Publication No.: US12047701B2Publication Date: 2024-07-23
- Inventor: Luonghung Asakura , Yoshiaki Inada
- Applicant: Sony Semiconductor Solutions Corporation
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Michael Best & Friedrich LLP
- Priority: JP 20075184 2020.04.21 JP 20193108 2020.11.20
- International Application: PCT/JP2021/006785 2021.02.24
- International Announcement: WO2021/215105A 2021.10.28
- Date entered country: 2022-10-07
- Main IPC: H04N25/77
- IPC: H04N25/77 ; H04N25/616 ; H04N25/65 ; H04N25/78 ; H04N25/79

Abstract:
Solid-state imaging elements are disclosed. In one example, an upstream circuit sequentially generates a predetermined reset level and a signal level corresponding to an exposure amount, and causes first and second capacitive elements to hold the reset level and the signal level. A selection circuit sequentially connects one of the capacitive elements to a predetermined downstream node, disconnects both capacitive elements from the downstream node, and connects the other capacitive element to the downstream node. A downstream reset transistor initializes a level of the downstream node when both capacitive elements are disconnected from the downstream node. A downstream circuit sequentially reads the reset level and the signal level from the first and second capacitive elements via the downstream node and outputs the reset level and the signal level.
Public/Granted literature
- US20230188867A1 SOLID-STATE IMAGING ELEMENT Public/Granted day:2023-06-15
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