Invention Grant
- Patent Title: Multi-pass data programming in a memory sub-system having multiple dies and planes
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Application No.: US17675888Application Date: 2022-02-18
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Publication No.: US12050809B2Publication Date: 2024-07-30
- Inventor: Sanjay Subbarao , Steven S. Williams , Mark Ish , John Edward Maroney
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/10

Abstract:
A memory sub-system having memory cells formed on a plurality of integrated circuit dies. After receiving a command from a host system to store data, the memory sub-system queues the command to allocate pages of memory cells in a plurality of dies in the plurality of integrated circuit dies based on a determination that each of the plurality of dies is available to perform a data programming operation for the command. Based on the page application, the memory sub-system generates a portion of a media layout to at least map logical addresses of the data identified in the command to the allocated pages and receives the data from the host system. The memory sub-system stores the data into the pages using a multi-pass programming technique, where an atomic multi-pass programming operation can be configured to use at least two pages in separate planes in one or more dies in the plurality of integrated circuit dies to program at least a portion of the data.
Public/Granted literature
- US20220171574A1 Multi-Pass Data Programming in a Memory Sub-System having Multiple Dies and Planes Public/Granted day:2022-06-02
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