Invention Grant
- Patent Title: Systems and methods for humidity control of FOUP during semiconductor fabrication
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Application No.: US17687844Application Date: 2022-03-07
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Publication No.: US12051609B2Publication Date: 2024-07-30
- Inventor: Sung-Ju Huang , Kuang-Wei Cheng , Cheng-Lung Wu , Yi-Fam Shiu , Chyi-Tsong Ni
- Applicant: Taiwan Semiconductor Manufacturing Company
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Lippes Mathias LLP
- Main IPC: H01L21/677
- IPC: H01L21/677 ; H01L21/673

Abstract:
The present disclosure relates to systems and methods for reducing the humidity within a FOUP (Front Opening Unified Pod) when loaded on an EFEM (Equipment Front End Module) for transfer of a semiconductor wafer substrate during fabrication processes. A deflector of specified structure is placed inside the EFEM above the load port of the FOUP. The deflector directs airflow in the EFEM away from the load port. The deflector includes a body with a plurality of apertures in the deflector body, and with a sloped front surface. Thus, the degree of penetration of high-humidity air from the EFEM into the FOUP is reduced.
Public/Granted literature
- US20230154778A1 SYSTEMS AND METHODS FOR HUMIDITY CONTROL OF FOUP DURING SEMICONDUCTOR FABRICATION Public/Granted day:2023-05-18
Information query
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