- Patent Title: Method of making a semiconductor device and semiconductor device
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Application No.: US17816051Application Date: 2022-07-29
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Publication No.: US12051617B2Publication Date: 2024-07-30
- Inventor: Min Han Hsu , Chun-Chang Chen , Jung-Chih Tsao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC NANJING COMPANY, LIMITED
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- Current Assignee Address: TW Hsinchu; CN Nanjing
- Agency: Hauptman Ham, LLP
- Priority: CN 2010013805.5 2020.01.07
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/033 ; H01L21/285 ; H01L21/288 ; H01L21/311 ; H01L23/528 ; H01L23/532
Abstract:
A method includes depositing a metallic hardmask over a dielectric layer. The method further includes etching a metallic hardmask opening in the metallic hardmask to expose a top surface of the dielectric layer. Th method further includes modifying a sidewall of the metallic hardmask opening by adding non-metal atoms into the metallic hardmask. The method further includes depositing a conductive material in the metallic hardmask opening.
Public/Granted literature
- US20220384253A1 METHOD OF MAKING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2022-12-01
Information query
IPC分类:
