Invention Grant
- Patent Title: Semiconductor device and data storage system including a landing pad on an external side region of a bypass via
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Application No.: US17543250Application Date: 2021-12-06
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Publication No.: US12051664B2Publication Date: 2024-07-30
- Inventor: Moorym Choi , Jungtae Sung , Junyoung Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20210029378 2021.03.05
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L25/00 ; H01L25/18

Abstract:
A semiconductor device includes a first semiconductor structure including a first substrate, circuit devices on the first substrate, a lower interconnection structure on the circuit devices, and a lower bonding structure electrically connected to the lower interconnection structure, and a second semiconductor structure including a second substrate disposed on the first semiconductor structure, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to a lower surface of the second substrate, channel structures that penetrate the gate electrodes and extend in the first direction, and an upper bonding structure electrically connected to the gate electrodes and the channel structures and bonded to the lower bonding structure. The second semiconductor structure further includes a first via connected to an upper portion of the second substrate, a second via spaced apart from the first via and the second substrate, and a contact plug.
Public/Granted literature
- US20220285302A1 SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME Public/Granted day:2022-09-08
Information query
IPC分类: