Invention Grant
- Patent Title: Memory array gate structures
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Application No.: US17884285Application Date: 2022-08-09
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Publication No.: US12051750B2Publication Date: 2024-07-30
- Inventor: Chun-Chieh Lu , Sai-Hooi Yeong , Bo-Feng Young , Yu-Ming Lin , Chih-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US17072367 2020.10.16
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G11C11/22 ; H01L29/04 ; H01L29/24 ; H01L29/66 ; H01L29/786 ; H10B51/10 ; H10B51/20 ; H10B51/30
Abstract:
A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising: a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line.
Public/Granted literature
- US20220416085A1 Memory Array Gate Structures Public/Granted day:2022-12-29
Information query
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