Invention Grant
- Patent Title: Source switch split LNA design with thin cascodes and high supply voltage
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Application No.: US18168064Application Date: 2023-02-13
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Publication No.: US12052003B2Publication Date: 2024-07-30
- Inventor: Joseph Golat , David Kovac
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: JAQUEZ LAND GREENHAUS & MCFARLAND LLP
- Agent John Land, Esq.
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F3/193

Abstract:
A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs). Cascode circuits, each having a “common source” configured input FET and a “common gate” configured output FET, serve as the LNAs. An amplifier-branch control switch, configured to withstand relatively high voltage differentials by means of a relatively thick gate oxide layer and coupled between a terminal of the output FET and a power supply, controls the ON and OFF state of each LNA while enabling use of a relatively thin gate oxide layer for the output FETs, thus improving LNA performance. Some embodiments may include a split cascode amplifier and/or a power amplifier.
Public/Granted literature
- US20230253933A1 Source Switch Split LNA Design with Thin Cascodes and High Supply Voltage Public/Granted day:2023-08-10
Information query
IPC分类: