Invention Grant
- Patent Title: Piezoelectric thin film, piezoelectric thin film element and piezoelectric transducer
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Application No.: US17208051Application Date: 2021-03-22
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Publication No.: US12052922B2Publication Date: 2024-07-30
- Inventor: Junpei Morishita
- Applicant: TDK Corporation
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP 20056476 2020.03.26 JP 20180666 2020.10.28
- Main IPC: H10N30/00
- IPC: H10N30/00 ; H10N30/076 ; H10N30/853 ; H10N30/87

Abstract:
Provided is a piezoelectric thin film containing a tetragonal crystal 1 of a perovskite type oxide and a tetragonal crystal 2 of the oxide. A (001) plane of the tetragonal crystal 1 and a (001) plane of the tetragonal crystal 2 are oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystal 1 is c1. An interval of a (100) plane of the crystal 1 is a1. An interval of the (001) plane of the crystal 2 is c2. An interval of a (100) plane of the crystal 2 is a2. c2/a2 is more than c1/a1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 1 is I1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 2 is I2. I2/(I1+I2) is from 0.50 to 0.90.
Public/Granted literature
- US20210305485A1 PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC TRANSDUCER Public/Granted day:2021-09-30
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