Invention Grant
- Patent Title: Preparation of layered MXene via elemental halogen etching of MAX phase
-
Application No.: US17037883Application Date: 2020-09-30
-
Publication No.: US12054428B2Publication Date: 2024-08-06
- Inventor: Ali M. Jawaid , Richard A. Vaia , Asra Hassan
- Applicant: Government of the United States, as represented by the Secretary of the Air Force
- Applicant Address: US OH Wright-Patterson AFB
- Assignee: United States of America as represented by the Secretary of the Air Force
- Current Assignee: United States of America as represented by the Secretary of the Air Force
- Current Assignee Address: US NY Rome
- Agency: AFRL/RI
- Agent Randall P. Jones
- Main IPC: C04B35/56
- IPC: C04B35/56 ; C01B21/06 ; C01B32/90 ; C04B35/622 ; C04B41/00 ; C04B41/53

Abstract:
A method of making a layered MXene material comprises a) introducing dried MAX phase powder into a vessel under anhydrous, inert conditions, the MAX phase powder comprising a general formula of Mn+1AXn (n=1, 2, 3, or 4), wherein M is a transition metal or p-block metalloid selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Re, Cu, Ni, Ag, Zn, Cd, In, Sn, and Pb; interlayer A is a Group III, IV, or V metalloid selected from the group consisting of Al, Si, Ga, Ge, In, Sn, Pb, As, Bi, Sb, and X is one of C (carbon) and N (nitrogen); b) introducing a halogen and solvent to the dried MAX phase to create a halogen solution having a predetermined concentration; c) allowing a reaction to proceed for about 24 hours between 30-90° C. to create a reaction slurry comprising a MXene material.
Public/Granted literature
- US20210139379A1 Preparation of Layered MXene via Elemental Halogen Etching of MAX Phase Public/Granted day:2021-05-13
Information query
IPC分类: