Invention Grant
- Patent Title: Substrate processing method and substrate processing apparatus
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Application No.: US18082674Application Date: 2022-12-16
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Publication No.: US12054828B2Publication Date: 2024-08-06
- Inventor: Kohei Fukushima
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 17182928 2017.09.22
- Main IPC: C23C16/52
- IPC: C23C16/52 ; C23C16/40 ; C23C16/455 ; C23C16/458 ; H01L21/67 ; H01L21/673 ; H01L21/687

Abstract:
A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.
Public/Granted literature
- US20230118483A1 Substrate Processing Method and Substrate Processing Apparatus Public/Granted day:2023-04-20
Information query
IPC分类: