Invention Grant
- Patent Title: Memory device having reduced power noise in refresh operation and operating method thereof
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Application No.: US17982099Application Date: 2022-11-07
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Publication No.: US12056371B2Publication Date: 2024-08-06
- Inventor: Jungmin You , Seongjin Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20210170368 2021.12.01 KR 20220044757 2022.04.11
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06

Abstract:
The present disclosure provides methods, apparatuses, and systems having reduced power noise in a refresh operation. In some embodiments, an operating method includes: performing, in response to receiving a first refresh command, a first normal refresh, at a first refresh timing, in which first N word lines of a plurality of word lines are simultaneously refreshed, and a first target refresh, at a second refresh timing, on at least one first victim word line that is adjacent to a maximum activated word line that is most frequently activated from among the plurality of word lines; and performing, in response to receiving a second refresh command, a second normal refresh, at a third refresh timing, in which second N word lines are simultaneously refreshed, and a second target refresh, at a fourth refresh timing, on at least one second victim word line that is adjacent to the maximum activated word line.
Public/Granted literature
- US20230168818A1 MEMORY DEVICE HAVING REDUCED POWER NOISE IN REFRESH OPERATION AND OPERATING METHOD THEREOF Public/Granted day:2023-06-01
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