Invention Grant
- Patent Title: Memory device with tunable probabilistic state
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Application No.: US18074576Application Date: 2022-12-05
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Publication No.: US12057153B2Publication Date: 2024-08-06
- Inventor: Ming Yuan Song
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H10B61/00 ; H10N50/10 ; H10N50/80

Abstract:
Some embodiments relate to a probabilistic random number generator. The probabilistic random number generator includes a memory cell comprising a magnetic tunnel junction (MTJ), and an access transistor coupled to the MTJ of the memory cell. A variable current source is coupled to the access transistor and is configured to provide a plurality of predetermined current pulse shapes, respectively, to the MTJ to generate a bit stream that includes a plurality of probabilistic random bits, respectively, from the MTJ. The predetermined current pulse shapes have different current amplitudes and/or pulse widths corresponding to different switching probabilities for the MTJ.
Public/Granted literature
- US20230086638A1 MEMORY DEVICE WITH TUNABLE PROBABILISTIC STATE Public/Granted day:2023-03-23
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