Invention Grant
- Patent Title: Method for efficiently waking up ferroelectric memory
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Application No.: US17370144Application Date: 2021-07-08
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Publication No.: US12057154B2Publication Date: 2024-08-06
- Inventor: Tzu-Yu Chen , Sheng-Hung Shih , Fu-Chen Chang , Kuo-Chi Tu , Wen-Ting Chu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C7/20

Abstract:
A method for efficiently waking up ferroelectric memory is provided. A wafer is formed with a plurality of first signal lines, a plurality of second signal lines, a plurality of third signal lines, and a plurality of ferroelectric memory cells that constitute a ferroelectric memory array. Each of the ferroelectric memory cells is electrically connected to one of the first signal lines, one of the second signal lines and one of the third signal lines. Voltage signals are simultaneously applied to the first signal lines, the second signal lines and the third signal lines to induce occurrence of a wake-up effect in the ferroelectric memory cells.
Public/Granted literature
- US20230011895A1 METHOD FOR EFFICIENTLY WAKING UP FERROELECTRIC MEMORY Public/Granted day:2023-01-12
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