Selective silicon dioxide removal using low pressure low bias deuterium plasma

Invention Grant

US12057319B2 Selective silicon dioxide removal using low pressure low bias deuterium plasma 有权

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Patent Title: Selective silicon dioxide removal using low pressure low bias deuterium plasma
Application No.: US17438884

Application Date: 2020-03-12
Publication No.: US12057319B2

Publication Date: 2024-08-06
Inventor: Juline Shoeb , Alexander Paterson
Applicant: Lam Research Corporation
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: PENILLA IP, APC
International Application: PCT/US2020/022445 2020.03.12
International Announcement: WO2020/186087A 2020.09.17
Date entered country: 2021-09-13
Main IPC: H01L21/311
IPC: H01L21/311 ; H01J37/32 ; H01L21/02 ; H01L21/30

Selective silicon dioxide removal using low pressure low bias deuterium plasma

Abstract:

A method is provided, including the following method operations: generating a deuterium plasma, the deuterium plasma including a plurality of energetic deuterium atoms; and directing one or more of the plurality of energetic deuterium atoms to a surface of a substrate, the surface of the substrate having a region of silicon dioxide, the region of silicon dioxide having an underlying silicon layer; wherein the one or more of the plurality of energetic deuterium atoms selectively etch the region of silicon oxide, to the exclusion of the underlying silicon layer.

Public/Granted literature

US20220148852A1 SELECTIVE SILICON DIOXIDE REMOVAL USING LOW PRESSURE LOW BIAS DEUTERIUM PLASMA Public/Granted day:2022-05-12

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀