Invention Grant
- Patent Title: Methods for etching metal films using plasma processing
-
Application No.: US16658620Application Date: 2019-10-21
-
Publication No.: US12057322B2Publication Date: 2024-08-06
- Inventor: Nicholas Joy , Devi Koty , Qingyun Yang , Nathan P. Marchack , Sebastian Ulrich Engelmann
- Applicant: Tokyo Electron Limited , International Business Machines Corporation
- Applicant Address: JP NY Tokyo
- Assignee: Tokyo Electron Limited,International Business Machines Corporation
- Current Assignee: Tokyo Electron Limited,International Business Machines Corporation
- Current Assignee Address: JP Tokyo; US NY Armonk
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/02 ; H01L21/67 ; H01L21/768
Abstract:
A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.
Public/Granted literature
- US20210118693A1 METHODS FOR ETCHING METAL FILMS USING PLASMA PROCESSING Public/Granted day:2021-04-22
Information query
IPC分类:
