- Patent Title: FinFET devices with embedded air gaps and the fabrication thereof
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Application No.: US17349741Application Date: 2021-06-16
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Publication No.: US12057343B2Publication Date: 2024-08-06
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- The original application number of the division: US16203987 2018.11.29
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/66
Abstract:
A semiconductor device includes a first gate structure disposed over a substrate. The first gate structure extends in a first direction. A second gate structure is disposed over the substrate. The second gate structure extends in the first direction. A dielectric material is disposed between the first gate structure and the second gate structure. An air gap is disposed within the dielectric material.
Public/Granted literature
- US20210313216A1 FinFET Devices with Embedded Air Gaps and the Fabrication Thereof Public/Granted day:2021-10-07
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