Invention Grant
- Patent Title: Manufacturing method of active device substrate
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Application No.: US17519543Application Date: 2021-11-04
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Publication No.: US12057347B2Publication Date: 2024-08-06
- Inventor: Yi-Yueh Hsu , Kuan-Hsun Chen
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW 0135908 2021.09.27
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H05K1/11

Abstract:
Provided is a manufacturing method of an active device substrate including the following steps. A blind hole is formed in a substrate. A first conductive pattern and an active device are formed on a first surface of the substrate, where the first conductive pattern overlaps the blind hole. After the first conductive pattern and the active device are formed, an etching process is executed on the substrate to form a through hole penetrating the substrate at the position of the blind hole. A conductive material is filled into the through hole to form a conductive hole. The conductive hole is electrically connected to the first conductive pattern. A second conductive pattern is formed on a second surface of the substrate, where the second conductive pattern is electrically connected to the first conductive pattern through the conductive hole.
Public/Granted literature
- US20230097567A1 MANUFACTURING METHOD OF ACTIVE DEVICE SUBSTRATE Public/Granted day:2023-03-30
Information query
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