Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
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Application No.: US17586264Application Date: 2022-01-27
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Publication No.: US12057367B2Publication Date: 2024-08-06
- Inventor: Yushi Sato , Yuichiro Hinata , Naoyuki Kanai
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JP 21031483 2021.03.01
- Main IPC: H01L23/06
- IPC: H01L23/06 ; H01L21/48 ; H01L21/56 ; H01L23/10 ; H01L23/31 ; H01L23/373

Abstract:
A semiconductor device includes a semiconductor chip, an insulated circuit board including a metal plate, an insulating plate and a circuit pattern, each of which has a rectangular shape, and a spacer part disposed on the periphery of a rear surface of the metal plate including at least one of the four corners thereof. The spacer part protrudes from a rear surface of the metal plate in the thickness direction away from a front surface of the insulated circuit board.
Public/Granted literature
- US20220278018A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-09-01
Information query
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