Invention Grant
- Patent Title: Semiconductor device having an air gap between a contact pad and a sidewall of contact hole
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Application No.: US17521849Application Date: 2021-11-08
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Publication No.: US12057396B2Publication Date: 2024-08-06
- Inventor: Yong Woo Hyung
- Applicant: Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: CN Fuijan
- Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: CN Quanzhou
- Priority: CN 2011338461.1 2020.11.25 CN 2022770473.3 2020.11.25
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/768 ; H01L23/528
Abstract:
Disclosed are a semiconductor device and a method for preparing a semiconductor device. The semiconductor device is provided with contact pad structures in contact holes. Each of the contact pad structures is configured to comprise a first contact pad, a second contact pad adaptively covering the first contact pad, and a contact plug located on the second contact pad. The first contact pad is in full contact with an active region in a substrate. In addition, an air gap is formed between the first contact pad and a side wall on a side of the respective contact hole.
Public/Granted literature
- US20220165668A1 SEMICONDUCTOR DEVICE AND METHOD FOR PREPARING SEMICONDUCTOR DEVICE Public/Granted day:2022-05-26
Information query
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