Invention Grant
- Patent Title: High power transistor with interior-fed fingers
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Application No.: US17834421Application Date: 2022-06-07
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Publication No.: US12057484B2Publication Date: 2024-08-06
- Inventor: Frank Trang , Zulhazmi Mokhti , Haedong Jang
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee Address: US MA Lowell
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L23/00 ; H01L29/06 ; H01L29/40 ; H01L29/417 ; H01L29/778
Abstract:
A transistor device includes a gate finger and a drain finger extending on a semiconductor structure, a gate bond pad coupled to the gate finger, and a drain bond pad coupled to the drain finger. The gate bond pad extends on the gate finger and the drain finger.
Public/Granted literature
- US20220302271A1 HIGH POWER TRANSISTOR WITH INTERIOR-FED FINGERS Public/Granted day:2022-09-22
Information query
IPC分类:
