A method of manufacturing a semiconductor device comprises: providing a substrate; forming a ferroelectric layer on the substrate; stacking two-dimensional conductive metal-organic frameworks that include cavities on the ferroelectric layer to form a metal-organic framework layer, the cavities of the conductive metal-organic frameworks being disposed to overlap with each other in a thickness direction of the metal-organic framework layer; disposing metal particles within the overlapping cavities to form a charge trap layer; forming a gate insulation layer on the charge trap layer; and forming a gate electrode layer on the gate insulation layer.