Invention Grant
- Patent Title: Test substrate and manufacturing method therefor, test method, and display substrate
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Application No.: US16981938Application Date: 2019-12-23
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Publication No.: US12058924B2Publication Date: 2024-08-06
- Inventor: Lei Fan , Zheng Bao
- Applicant: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Sichuan
- Assignee: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Sichuan; CN Beijing
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: CN 1910005365.6 2019.01.03
- International Application: PCT/CN2019/127421 2019.12.23
- International Announcement: WO2020/140783A 2020.07.09
- Date entered country: 2020-09-17
- Main IPC: H10K71/70
- IPC: H10K71/70 ; G02F1/1362 ; G02F1/1368 ; G09G3/00 ; H01L29/786 ; H10K71/00

Abstract:
A test substrate has at least one test region and includes a base substrate, a plurality of thin film transistors disposed on the base substrate, at least one test hole located in the test region, and at least one test pin. At least one of the thin film transistors is a target thin film transistor to be tested, each target thin film transistor is located in one test region. Each test hole exposes a source region, a drain region or a gate of a corresponding target thin film transistor at a bottom thereof. Each test pin is located in one test hole. One end of the test pin passes through the test hole to be coupled to the source region, the drain region or the gate of the corresponding target thin film transistor, and another end of the test pin is exposed at a surface of the test substrate.
Public/Granted literature
- US20210020084A1 TEST SUBSTRATE AND MANUFACTURING METHOD THEREFOR, TEST METHOD, AND DISPLAY SUBSTRATE Public/Granted day:2021-01-21
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