Invention Grant
- Patent Title: Particle removal method in semiconductor fabrication process
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Application No.: US17377820Application Date: 2021-07-16
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Publication No.: US12062535B2Publication Date: 2024-08-13
- Inventor: Chih-Ming Tsao , Po-Cheng Chen , Deng-An Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B01D47/02 ; B01D50/00 ; H01L21/67

Abstract:
A system for processing a semiconductor wafer is provided. The system includes a processing tool. The system also includes gas handling housing having a gas inlet and a gas outlet. The system further includes an exhaust conduit fluidly communicating with the processing tool and the gas inlet of the gas handling housing. In addition, the system includes at least one first filtering assembly and at least one second filtering assembly. The first filtering assembly and the second filtering assembly are positioned in the gas handling housing and arranged in a series along a flowing path that extends from the gas inlet to the gas outlet of the gas handling housing. Each of the first filtering assembly and the second filtering assembly comprises a plurality of wire meshes stacked on top of another.
Public/Granted literature
- US20230018029A1 PARTICLE REMOVAL METHOD IN SEMICONDUCTOR FABRICATION PROCESS Public/Granted day:2023-01-19
Information query
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