Invention Grant
- Patent Title: High etch selectivity, low stress ashable carbon hard mask
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Application No.: US17439948Application Date: 2020-03-18
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Publication No.: US12062537B2Publication Date: 2024-08-13
- Inventor: Jun Xue , Mary Anne Manumpil , Shih-Ked Lee , Samantha SiamHwa Tan
- Applicant: LAM RESEARCH CORPORATION
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- International Application: PCT/US2020/023239 2020.03.18
- International Announcement: WO2020/197866A 2020.10.01
- Date entered country: 2021-09-16
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/26 ; C23C16/455 ; C23C16/505 ; H01L21/308 ; H01L21/311 ; H01L21/3213
Abstract:
A method for depositing a carbon ashable hard mask layer on a substrate includes a) arranging a substrate in a processing chamber; b) setting chamber pressure in a predetermined pressure range; c) setting a substrate temperature in a predetermined temperature range from −20° C. to 200° C.; d) supplying a gas mixture including hydrocarbon precursor and one or more other gases; and e) striking plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.
Public/Granted literature
- US20220181147A1 HIGH ETCH SELECTIVITY, LOW STRESS ASHABLE CARBON HARD MASK Public/Granted day:2022-06-09
Information query
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