A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and multiple first conductive lines over the semiconductor substrate. The first conductive lines are not electrically connected to each other. The semiconductor device structure also includes multiple first magnetic structures wrapped around portions of the first conductive lines and multiple second conductive lines over the semiconductor substrate. The second conductive lines are electrically connected in series. The semiconductor device structure further includes multiple second magnetic structures wrapped around portions of the second conductive lines. A size of each of the second magnetic structures and a size of each of the first magnetic structures are substantially the same.