Invention Grant
- Patent Title: Long channel and short channel vertical FET co-integration for vertical FET VTFET
-
Application No.: US17578865Application Date: 2022-01-19
-
Publication No.: US12062657B2Publication Date: 2024-08-13
- Inventor: Terence B. Hook , Baozhen Li , Kirk David Peterson , Junli Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Kelsey M. Skodje
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L29/66
Abstract:
A semiconductor including a short channel device including a vertical FET (Field-Effect Transistor), and a long channel device comprising a second vertical FET integrated with the short channel device. The long channel device including a plurality of short channel devices.
Public/Granted literature
- US20220139909A1 LONG CHANNEL AND SHORT CHANNEL VERTICAL FET CO-INTEGRATION FOR VERTICAL FET VTFET Public/Granted day:2022-05-05
Information query
IPC分类:
