Invention Grant
- Patent Title: Semiconductor device structure and methods of forming the same
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Application No.: US17459748Application Date: 2021-08-27
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Publication No.: US12062693B2Publication Date: 2024-08-13
- Inventor: Jia-Ni Yu , Kuo-Cheng Chiang , Mao-Lin Huang , Lung-Kun Chu , Chung-Wei Hsu , Chih-Hao Wang , Kuan-Lun Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ CARR LAW OFFICE
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8234 ; H01L29/423 ; H01L29/66 ; H01L29/786

Abstract:
A semiconductor device structure, along with methods of forming such, are described. The structure includes a first gate electrode layer, a second gate electrode layer disposed over and aligned with the first gate electrode layer, and a gate isolation structure disposed between the first gate electrode layer and the second gate electrode layer. The gate isolation structure includes a first surface and a second surface opposite the first surface. At least a portion of the first surface is in contact with the first gate electrode layer. The second surface includes a first material and a second material different from the first material, and at least a portion of the second surface is in contact with the second gate electrode layer.
Public/Granted literature
- US20230062026A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2023-03-02
Information query
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