Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17420536Application Date: 2020-01-06
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Publication No.: US12062764B2Publication Date: 2024-08-13
- Inventor: Ryota Tajima , Kei Takahashi , Hiroki Inoue , Munehiro Kozuma , Takahiro Fukutome
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 19004842 2019.01.16
- International Application: PCT/IB2020/050043 2020.01.06
- International Announcement: WO2020/148599A 2020.07.23
- Date entered country: 2021-07-02
- Main IPC: H01M10/44
- IPC: H01M10/44 ; G01R31/367 ; H01M10/48 ; H02J7/00

Abstract:
A semiconductor device that inhibits deterioration of a secondary battery is provided. The semiconductor device includes a secondary battery module and a first circuit. The secondary battery module includes a secondary battery and a sensor. The first circuit includes a variable resistor. The sensor has a function of measuring a temperature of the secondary battery. The first circuit has a function of judging the charge voltage of the secondary battery and outputting a first result; a function of judging the temperature of the secondary battery measured by the sensor and outputting a second result; a function of determining the magnitude of the variable resistor on the basis of the first result and the second result; a function of discharging the charge voltage through the variable resistor; and a function of stopping discharge when the charge voltage reaches a specified voltage.
Public/Granted literature
- US20220085427A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-17
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