Invention Grant
- Patent Title: Chalcogen compound and semiconductor device including the same
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Application No.: US17362075Application Date: 2021-06-29
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Publication No.: US12063793B2Publication Date: 2024-08-13
- Inventor: Kiyeon Yang , Bonwon Koo , Segab Kwon , Chungman Kim , Yongyoung Park , Dongho Ahn , Seunggeun Yu , Changseung Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: HARNESS, DICKEY & PIERCE, P.L.C.
- Priority: KR 20200149586 2020.11.10
- Main IPC: H10B63/00
- IPC: H10B63/00 ; H01L29/24 ; H10N70/00 ; H10N70/20

Abstract:
Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).
Public/Granted literature
- US20220149114A1 CHALCOGEN COMPOUND AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2022-05-12
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